Threading dislocation removal from the near-surface region of epitaxial cadmium telluride on silicon by lithographic patterning of the substrateMOLSTAD, J. C; BENSON, J. D; MARKUNAS, J. K et al.Journal of electronic materials. 2005, Vol 34, Num 9, pp 1242-1248, issn 0361-5235, 7 p.Article

Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe DepositionBENSON, J. D; BUBULAC, L. O; CHEN, Y et al.Journal of electronic materials. 2014, Vol 43, Num 11, pp 3993-3998, issn 0361-5235, 6 p.Article

Feasibility of Localized Substrate Thinning for Reduced Dislocation Density in CdTe/Si HeterostructuresJACOBS, R. N; SMITH, P. J; MARKUNAS, J. K et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 1036-1042, issn 0361-5235, 7 p.Conference Paper

Structural Analysis of CdTe Hetero-epitaxy on (211) SiBENSON, J. D; JACOBS, R. N; MARKUNAS, J. K et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1231-1236, issn 0361-5235, 6 p.Conference Paper

CdZnTe graded buffer layers for HgCdTe/Si integrationGROENERT, M. E; MARKUNAS, J. K.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1287-1292, issn 0361-5235, 6 p.Conference Paper

Surface structure of plasma-etched (211)B HgCdTeBENSON, J. D; STOLTZ, A. J; DINAN, J. H et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 726-732, issn 0361-5235, 7 p.Conference Paper

Dislocation Analysis in (112)B HgCdTe/CdTe/SiBENSON, J. D; FARRELL, S; ALMEIDA, L. A et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1847-1853, issn 0361-5235, 7 p.Conference Paper

Characterization of Dislocations in (112)B HgCdTe/CdTe/SiBENSON, J. D; BUBULAC, L. O; CHEN, Y et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 1080-1086, issn 0361-5235, 7 p.Conference Paper

X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge SubstratesMARKUNAS, J. K; ALMEIDA, L. A; JACOBS, R. N et al.Journal of electronic materials. 2010, Vol 39, Num 6, pp 738-742, issn 0361-5235, 5 p.Conference Paper

Surface structure of molecular beam epitaxy (211)B HgCdTeBENSON, J. D; ALMEIDA, L. A; CARMODY, M. W et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 949-957, issn 0361-5235, 9 p.Conference Paper

The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic AnnealingLENNON, C. M; ALMEIDA, L. A; JACOBS, R. N et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3344-3348, issn 0361-5235, 5 p.Conference Paper

Development of MBE II―VI Epilayers on GaAs(211)BJACOBS, R. N; NOZAKI, C; BILLMAN, C et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2707-2713, issn 0361-5235, 7 p.Conference Paper

High-Quality (211)B CdTe on (211 )Si Substrates Using Metalorganic Vapor-Phase EpitaxyRAO, S. R; SHINTRI, S. S; MARKUNAS, J. K et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1790-1794, issn 0361-5235, 5 p.Conference Paper

Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si SubstratesRAO, S. R; SHINTRI, S. S; MARKUNAS, J. K et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 996-1000, issn 0361-5235, 5 p.Conference Paper

Helium-Plasma-Prepared (111)A HgCdTe and (211)B InSbMARTINKA, Michael; JAIME-VASQUEZ, Marvin; STOLTZ, Andrew J et al.Journal of electronic materials. 2008, Vol 37, Num 2, pp 152-156, issn 0361-5235, 5 p.Article

Material quality characterization of CdZnTe substrates for HgCdTe epitaxyCARINI, G. A; ARNONE, C; ZHAO, J et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1495-1502, issn 0361-5235, 8 p.Conference Paper

Impurity Gettering in (112)B HgCdTe/CdTe/Alternate SubstratesBENSON, J. D; BUBULAC, L. O; BRILL, G et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3217-3223, issn 0361-5235, 7 p.Conference Paper

Growth and Analysis of HgCdTe on Alternate SubstratesBENSON, J. D; BUBULAC, L. O; CHEN, Y et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2971-2974, issn 0361-5235, 4 p.Conference Paper

Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic EllipsometryLENNON, C. M; ALMEIDA, L. A; JACOBS, R. N et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2965-2970, issn 0361-5235, 6 p.Conference Paper

Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer LayersMARKUNAS, J. K; JACOBS, R. N; SMITH, P. J et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1809-1814, issn 0361-5235, 6 p.Conference Paper

Topography and Dislocations in (112)B HgCdTe/CdTe/SiBENSON, J. D; SMITH, P. J; BRILL, G et al.Journal of electronic materials. 2009, Vol 38, Num 8, pp 1771-1775, issn 0361-5235, 5 p.Conference Paper

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe SensorsJAIME-VASQUEZ, M; MARTINKA, M; STOLTZ, A. J et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1247-1254, issn 0361-5235, 8 p.Conference Paper

Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performanceCARMODY, M; PASKO, J. G; DHAR, N. K et al.Journal of electronic materials. 2004, Vol 33, Num 6, pp 531-537, issn 0361-5235, 7 p.Conference Paper